Eight Boron Doped Silicon Wafers:
- Manufacturer: Cemat-Silicon S.A.
- Diameter: 3" (76 +/- 0.5 mm)
- Thickness: 13-17 mils (330 to 430 um)
- Doping: P-type (Boron) 10^16 cm^-3
- Orientation: <100> +/- 5 degrees, float-zone or Czochralski
- Resistivity: 3-10 Ohm cm
- Date of Manufacture: 04/28/95
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November 13, 1995